sot-89 plastic-encapsulate transistors transistor (pnp) features z low collector-emitter saturation voltage v ce(sat) z for low-frequency output amplification z maximum ratings (t a =25 unless otherwise noted) symbol para meter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -2 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55~ 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min t yp max unit collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -1 a emitter cut-off current i ebo v eb =-5v, i c =0 -1 a h fe1 v ce =-2v, i c =-200ma 120 340 dc current gain h fe2 v ce =-2v, i c =-1a 60 collector-emitter saturation voltage v ce(sat) i c =-1a, i b =-50ma -0.3 v base- emitter saturation voltage v be(sat) i c =-1a, i b =-50ma -1..2 v transition frequency f t v ce =-10v, i c =50ma, f=200mhz 80 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 60 pf classification of h fe1 rank r s range 120-240 170-340 marking 1l sot-89 1. base 2. collector 3. emitter 1 2 3 2012- 0 willas electronic corp. 2SB1440
0.1 1 10 10 100 1e-3 0.01 0.1 1 100 0 25 50 75 100 125 150 0 100 200 300 400 500 600 1e-4 1e-3 0.01 0.1 1 300 400 500 600 700 800 900 1000 1100 1e-4 1e-3 0.01 0.1 1 10 100 01234567 0.00 0.05 0.10 0.15 0.20 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib cob cib f=1mhz i e =0 / i c =0 t a =25 o c 500 - - - - - - -- - - - - - - - - - - - dc current gain h fe collector current i c (a) t a =25 o c t a =100 o c i c h fe v ce = -2v 50 800 200 300 2 p c t a ambient temperature t a ( ) collector power dissipation p c (mw) - - - - - - - - - - - - - - - - - - base-emitter saturation voltage v besat (mv) i c v besat collector current i c (a) t a =100 t a =25 =20 2 - - - - - - typical characteristics collector-emitter saturation voltage v cesat (mv) collector current i c (a) t a =25 t a =100 v cesat i c =20 700 2 common emitter t a =25 -1.0ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma -0.2ma i b =-0.1ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic -0.22 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SB1440
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SB1440
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